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| AF9928N N-Channel Enhancement Mode Power MOSFET Features - Low On-resistance - Capable of 2.5V Gate Drive - Optimal DC/DC battery application General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 20 rDS(on) (m) 23 ID (A) 5 Pin Assignments Pin Descriptions D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain TSSOP-8 Ordering information AX Feature F :MOSFET PN 9928N X X X Package Lead Free Packing Blank : Tube or Bulk A : Tape & Reel TS: TSSOP-8 Blank : Normal L : Lead Free Package This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 11, 2005 1/5 AF9928N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1), at VGS=4.5V Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range at TA=25C at TA=70C at TA=25C Rating 20 12 5 3.5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note 1) 2 o Max. Value 125 Units o C/W Note 1: Surface mounted on 1 in copper pad of FR4 board, 208 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Electrical Characteristics at TJ=25C (unless otherwise specified) Symbol BVDSS BVDSS /TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=4.5V, ID=5A VGS=2.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=20V, VGS=0V, TJ=25C VDS=20V, VGS=0V, TJ=70C VGS=12V ID=5A, VDS=10V, VGS=4.5V VDS=10V, ID=1A, RG=3.3, VGS=4.5V RD=10 VGS=0V, VDS=20V, f=1.0MHz Min. 20 0.5 - Typ. 0.02 21 15.9 1.5 7.4 6.2 9 30 11 530 245 125 Max. 23 29 1 25 10 - Units V V/oC m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage (Note 3) Test Conditions VD=VG=0V, VS=1.2V TJ=25C , IS=5A, VGS=0V Min. Typ. Max. 0.83 1.2 Units A V Note3: Pulse width 300us, duty cycle 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.1 Aug 11, 2005 AF9928N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.1 Aug 11, 2005 AF9928N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.1 Aug 11, 2005 AF9928N N-Channel Enhancement Mode Power MOSFET Marking Information TSSOP-8L ( Top View ) Logo Part Number Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ 9928N AA Y W X Package Information Package Type: TSSOP-8L D E1 E L DETAIL A e B A1 A C DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L e Anachip Corp. www.anachip.com.tw Dimensions In Millimeters Min. Nom. Max. 1.20 0.05 0.15 0.19 0.30 0.127 2.90 3.00 3.10 6.20 6.40 6.60 4.30 4.40 4.50 0.45 0.60 0.75 0.65 REF. 0o -8o Rev. 1.1 5/5 Aug 11, 2005 |
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